5 . a formula is deduced to calculate the built - in voltage of the compound semiconductor 通过推导,得出一个计算化合物半导体异质结内建电势的公式。
Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure 氧化锌( zno )是一种具有六方结构的?族宽带隙半导体材料,室温下带隙宽度高达3 . 3ev 。
Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure 氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料,室温下能带带隙eg为3 . 37ev 。